Integration methods to fabricate internal spacers for nanowire devices

ABSTRACT

A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

This is a Continuation of application Ser. No. 16/153,456 filed Oct. 5,2018, which is a Continuation of application Ser. No. 15/859,226 filedDec. 29, 2017, now U.S. Pat. No. 10,121,856 issued on Nov. 6, 2018,which is a Continuation of application Ser. No. 15/333,123 filed Oct.24, 2016, now U.S. Pat. No. 9,859,368 issued Jan. 2, 2018, which is aDivisional of application Ser. No. 13/539,195 filed Jun. 29, 2012, nowU.S. Pat. No. 9,484,447 issued Nov. 1, 2016, the entire contents ofwhich are hereby incorporated by reference herein.

BACKGROUND

As integrated device manufacturers continue to shrink the feature sizesof transistor devices to achieve greater circuit density and higherperformance, there is a need to manage transistor drive currents whilereducing short-channel effects, parasitic capacitance and off-stateleakage in next-generation devices. Non-planar transistors, such as finand nanowire-based devices, enable improved control of short channeleffects. For example, in nanowire-based transistors the gate stack wrapsaround the full perimeter of the nanowire, enabling fuller depletion inthe channel region, and reducing short-channel effects due to steepersub-threshold current swing (SS) and smaller drain induced barrierlowering (DIBL). Wrap-around gate structures and source/drain contactsused in nanowire devices also enable greater management of leakage andcapacitance in the active regions, even as drive currents increase.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates an isometric view of a nanowire device having aplurality of internal spacers according to an embodiment of theinvention.

FIG. 1B illustrates a two-dimensional cross-sectional view of a nanowiredevice having a plurality of internal spacers according to an embodimentof the invention.

FIG. 1C illustrates a two-dimensional cross-sectional view of a nanowiredevice having a plurality of internal spacers according to an embodimentof the invention.

FIG. 1D illustrates a two-dimensional cross-sectional view of a nanowiredevice having a plurality of internal spacers according to an embodimentof the invention.

FIGS. 2A-2G illustrate two-dimensional cross-sectional views of a methodfor forming a nanowire device having internal spacers according to anembodiment of the invention.

FIGS. 3A-3F illustrate two-dimensional cross-sectional views of a methodfor forming a nanowire device internal spacers according to anembodiment of the invention.

FIG. 4 illustrates a computing device in accordance with one embodimentof the invention.

DETAILED DESCRIPTION

Internal spacers for gate all-around transistors and methods for formingsuch internal spacers are described. In various embodiments, descriptionis made with reference to figures. However, certain embodiments may bepracticed without one or more of these specific details, or incombination with other known methods and configurations. In thefollowing description, numerous specific details are set forth, such asspecific configurations, dimensions and processes, etc., in order toprovide a thorough understanding of the present invention. In otherinstances, well-known semiconductor processes and manufacturingtechniques have not been described in particular detail in order to notunnecessarily obscure the present invention. Reference throughout thisspecification to “one embodiment,” “an embodiment” or the like meansthat a particular feature, structure, configuration, or characteristicdescribed in connection with the embodiment is included in at least oneembodiment of the invention. Thus, the appearances of the phrase “in oneembodiment,” “an embodiment” or the like in various places throughoutthis specification are not necessarily referring to the same embodimentof the invention. Furthermore, the particular features, structures,configurations, or characteristics may be combined in any suitablemanner in one or more embodiment.

The terms “over”, “to”, “between” and “on” as used herein may refer to arelative position of one layer with respect to other layers. One layer“over” or “on” another layer or bonded “to” another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. One layer “between” layers may be directly incontact with the layers or may have one or more intervening layers.

In one aspect, embodiments of the invention describe a nanowiretransistor having internal spacers formed at the portions of theinterface of the source/drain region and the channel region that areinternal to the nanowire stack. The nanowire device has a wrap-aroundgate, which defines a channel region of the device. Source/drain regionsare disposed on opposite sides of the channel region. A pair of externalgate sidewall spacers are formed on the portion of the gate sidewallsthat are external to the nanowire stack.

The internal spacers are formed within the source/drain region of thetransistor, between adjacent nanowires and adjacent to the channelregion/gate structure. The internal spacers are formed of an insulative,low-k dielectric material. The internal spacers provide additionalinsulation between the gate structure and source/drain contacts, whichreduces overlap capacitance, risk of shorting, and current leakage. Theinternal sidewall spacers may be formed of the same or differentmaterial as the external sidewall spacers. Additionally, the internalsidewall spacers may be of the same or different thickness as theexternal sidewall spacers.

In another aspect, embodiments of the invention describe a method forforming internal spacers by depositing spacer material in dimples formedadjacent to the channel region, where the dimples are formed by etchingfrom the source/drain side of the source/drain-channel interface. Forexample, a preliminary structure having a nanowire stack disposed on asubstrate and a gate structure defining a channel region within thenanowire stack is provided. A pair of source/drain regions of the deviceare disposed on opposite sides of the channel region. The gate structurehas a pair of gate sidewalls, and may be functional or sacrificial. Inan embodiment, external gate sidewall spacers are formed on the portionof the gate structure sidewalls that are external to the nanowire stack.

Within the source/drain regions, the nanowire stack consists ofalternating layers of nanowire material and sacrificial material. Thesacrificial material between the nanowires is removed from thesource/drain region to expose the edge the channel region. A dimple iscreated adjacent to the channel region, defined by the two sidewalls ofthe adjacent nanowires, the two adjacent exposed surfaces of theexternal sidewall spacers, and the edge of the channel region. Thedimple is open to the source/drain region. In an embodiment, thematerial below the bottommost nanowire in the nanowire stack mayoptionally be removed to expose the full perimeter of the bottommostnanowire, in which case the dimple volume is defined by the bottommostnanowire, the edge of the channel region, and the substrate/isolationmaterial, while being open to the source/drain region.

Next, spacer material is conformally deposited over the exposed surfaceswithin the source/drain region, such that it fills the dimple volumes.Spacer material may also fill the spaces between adjacent nanowires.Optionally, the spacer material that forms on surfaces outside thedimple volume may then be transformed to alter the etch selectivity toallow better control of the etch process so that spacer material is notremoved from the dimple. Transformation may occur, for example, byplasma treatment, implantation, oxidation or a combination thereof. Inan embodiment, the transformation process is self-aligned to omit thespacer material within the dimple volumes, due to the shielding effectof the external sidewall spacers. The spacer material is then removedfrom the portion of the source/drain region external to the dimpleregions; the dimple regions retain spacer material, forming internalspacers. Additional processing steps may then be performed to form afunctioning device, such as forming source/drain contacts or forming afunctional gate structure. In a completed device, the internal spacersisolate the gate structure from the source/drain region, together withthe external sidewall spacers, to reduce overlap capacitance.

In another aspect, embodiments of the invention describe a method forforming internal spacers by depositing spacer material in dimples etchedadjacent to the channel region, where the dimples are formed by etchingfrom the channel side of the source/drain-channel interface. Forexample, a preliminary structure having a nanowire stack of nanowire andsacrificial material, a sacrificial gate structure defining a channelregion, external gate sidewall spacers on the sidewalls of thesacrificial gate structure, and a pair of source/drain regions onopposite sides of the channel region is provided.

The sacrificial gate structure material is removed to expose thenanowire stack in the channel region. Next, the sacrificial material isremoved from between adjacent nanowires, to expose the full perimeter ofeach nanowire. The sacrificial material is etched outside the channelregion to create dimples in the source/drain region. The dimples aredefined by the two opposing surfaces of the external sidewall spacer,two opposing surfaces of adjacent nanowires, and are open to the channelregion. In an embodiment, the thickness of the dimple in the directionnormal to the adjacent surface of the channel region is equal to thethickness of the external sidewall spacer. The material below thebottommost nanowire in the stack may optionally be removed to expose thefull perimeter of the bottommost nanowire, in which case dimples arealso defined below the bottommost nanowire, above the substrate orisolation region.

Next, spacer material is conformally deposited on the surfaces exposedby the opened channel region, such that it fills the dimples formed inthe source/drain region. Spacer material may also fill the channelregion. Optionally, the spacer material within the channel region istransformed to alter the etch selectivity, so that material within thechannel region may be easily removed without etching the material withinthe dimples. Transformation may occur, for example, by plasma treatment,implantation, oxidation, or a combination thereof. In an embodiment, thetransformation process is self-aligned to the channel region whileomitting the dimple volumes, due to the shielding of the dimple regionsby the external gate sidewall spacers. The spacer material is thenremoved from within the channel region of the device. The dimple regionsretain spacer material, forming internal spacers.

A functional gate structure may then be formed within the channelregion, wrapping around the portion of each nanowire within the channelregion and contacting the internal spacers. In addition, source/draincontacts may be formed in the source/drain region. The internal spacersimprove isolation of the gate structure from the source/drain region,reducing overlap capacitance.

FIGS. 1A-1C illustrate a nanowire transistor configured with internalgate sidewall spacers, according to an embodiment of the invention.Components of nanowire transistor 100 that are illustrated in FIGS. 1Band 1C are either omitted or represented by dashed lines in FIG. 1Aorder to clearly illustrate the placement of internal spacers 102.Referring now to FIG. 1A, an isometric view of a portion of a nanowiretransistor 100 having internal gate sidewall spacers 102 is illustrated,according to an embodiment of the invention. In an embodiment, internalspacers 102 are positioned within the source/drain region 112 of device100, adjacent to the channel region 108, between adjacent nanowires 106,and further defined by external sidewall spacer 110. In an embodiment,another pair of internal spacers 102 are positioned within thesource/drain region 112 of device 100, adjacent to the channel region108, between the bottommost nanowire 106 and substrate 104, and furtherdefined by external sidewall spacer 110.

In an example embodiment, nanowire transistor 100 features a pluralityof nanowires 106, disposed above a substrate 104 in a vertical nanowirestack 101, as indicated in the cross-sectional view shown by FIG. 1B.The nanowire stack 101 has an internal region and an external region. Inan embodiment, the internal region contains the nanowires 106, thematerials and/or volume between the nanowires 106. In an embodiment, theinternal region also comprises the materials and/or volume between thebottommost nanowire and the substrate 104. In an embodiment, theexternal region contains all materials and/or volume not containedwithin the internal region.

Substrate 104 may be composed of a material suitable for semiconductordevice fabrication. In one embodiment, the structure is formed using abulk semiconductor substrate. Substrate 104 may include, but is notlimited to, silicon, germanium, silicon-germanium, or a III-V compoundsemiconductor material. In another embodiment, the structure is formedusing a silicon-on-insulator (SOI) substrate. An SOI substrate includesa lower bulk substrate, a middle insulator layer disposed on the lowerbulk substrate, and a top monocrystalline layer. The middle insulatorlayer may comprise silicon dioxide, silicon nitride, or siliconoxynitride. The top single crystalline layer may be any suitablesemiconductor material, such as those listed above for a bulk substrate.

In an embodiment, nanowires 106 are formed from a semiconductormaterial. In one such embodiment, nanowires 106 are single-crystallineand have a lattice constant. Nanowires 106 may be a material such as,but not limited to, silicon, germanium, SiGe, GaAs, InSb, GaP, GaSb,InAlAs, InGaAs, GaSbP, GaAsSb, and InP. In a specific embodiment,nanowires 106 are silicon. In another specific embodiment, nanowires 106are germanium. In an embodiment, the nanowires 106 comprise a stressedmaterial, particularly the channel portion of nanowires 106 withinchannel region 108 of device 100. In an embodiment, nanowires 106 havesource/drain portions in source/drain regions 112 of device 100.

Channel region 108 of the device 100 is defined by a gate structure,which wraps around the perimeter of each nanowire 106, according to anembodiment of the invention. An example gate structure is illustrated inFIG. 1C, which is a cross-sectional view of the nanowire device in FIG.1A, taken along line B-B′. In FIG. 1C, the gate structure comprises agate dielectric layer 114 in contact with the full perimeter of thechannel portions of the nanowires 106, and a gate electrode 116 wrappingaround the gate dielectric layer 114, according to an embodiment. In anembodiment, gate dielectric layer 114 is composed of a high-k dielectricmaterial. For example, in one embodiment, the gate dielectric layer 114is composed of a material such as, but not limited to, hafnium oxide,hafnium oxy-nitiride, hafnium silicate, lanthanum oxide, zirconiumoxide, zirconium silicate, tantalum oxide, barium strontium titanate,barium titanate, strontium titanate, yttrium oxide, aluminum oxide, leadscandium tantalum oxide, lead zinc niobate, or a combination thereof. Inan embodiment, gate dielectric layer 114 is from 10 to 60 Å thick.

In an embodiment, gate electrode 116 is composed of a metal layer suchas, but not limited to, metal nitrides, metal carbides, metal silicides,metal aluminides, halfnium, zirconium, titanium, tantalum, aluminum,ruthenium, palladium, cobalt, or nickel. In a specific embodiment, thegate electrode is composed of a non-workfunction-setting fill materialformed above a metal workfunction-setting layer. In an embodiment, gateelectrode 116 comprises a p-type work function metal. In anotherembodiment, gate electrode 116 comprises an n-type work function metal.

A pair of source/drain regions 112 are disposed on opposite sides of thechannel region 108, according to an embodiment. In an embodiment, a pairof external sidewall spacers 110 are formed on the portion of the gatestructure sidewalls external to the nanowire stack, one within each ofthe source/drain regions 112. The thickness and material of the externalsidewall spacer 110 may be selected to offset doping of the source/drainportions of nanowires 106, minimize overlap capacitance between theportions of channel region 108 and source/drain region 112 external tothe nanowire stack, to reduce device leakage, and to reduce the risk ofshorting between the gate electrode and the source/drain contacts.Sidewall spacers 110 may be composed of an insulative dielectricmaterial such as, but not limited to, silicon dioxide, siliconoxy-nitride, or silicon nitride. External sidewall spacers 110 are from20 to 100 Å thick.

Internal sidewall spacers 102 are adjacent to the gate structure, withinthe source/drain region 112, between adjacent nanowires 106, accordingto an embodiment of the invention. FIG. 1B illustrates a cross-sectionalview of the nanowire device 100 in FIG. 1A, taken along line A-A′. In anembodiment, internal sidewall spacers 102 are defined by two opposingsurfaces 109 of adjacent nanowires 106, and two opposing surfaces 103 ofexternal sidewall spacers 110. Referring to FIG. 1C, internal sidewallspacers 102 are further defined by channel region 108, as defined by thesurface of the gate structure, according to an embodiment. In anembodiment, internal sidewall spacers 102 are aligned with surface 107of external sidewall spacer 110. In an embodiment, internal sidewallspacers 102 are formed from the same dielectric material as the externalsidewall spacers 110. Additionally, the internal sidewall spacers may beof the same or different thickness as the external sidewall spacers 110,such as from 20 to 100 Å.

In an embodiment, the internal sidewall spacers 102 protect againstshorting and leakage, and reduce overlap capacitance between the gatestructure and conductive or semiconductive material 113 in the internalregion of the nanowire stack within the source/drain regions 112 ofdevice 100. For example, where material 113 is a metal source/draincontact, wrapping around the source/drain portions of nanowires 106,internal spacers reduce capacitance between the portions of the gateelectrode 116 and the metal source/drain contacts 113 that are internalto the nanowire stack. Material 113 may also be a semiconductivematerial. The internal sidewall spacers 102 may be formed of a suitabledielectric material.

In another embodiment, source/drain regions 112 comprise homogeneoussource and drain portions 115. In a specific embodiment, homogeneoussource/drain portions 115 are in electrical contact with the channelportions of each nanowire 106. In an embodiment, homogeneous source anddrain portions 115 may be doped or undoped semiconductor material. Inanother specific embodiment, homogeneous source/drain portions 115 are ametal species. In an embodiment, a portion of nanowires 106 remains inthe source/drain region 112, such as between internal spacers 102, asshown in FIG. 1D. In another embodiment, all of the source/drainportions of nanowires 106 have been removed, such that nanowires 106 areonly within the channel region 108.

In yet other example embodiments, the bottommost nanowire 106 in thenanowire stack rests on the top surface of a semiconductor fin extendingfrom the substrate 104, forming a tri-gate device. In such anembodiment, the gate structure does not wrap around the full perimeterof the bottommost nanowire 106. In an embodiment where there is no gateportion below the bottommost nanowire and internal to the nanowirestack, internal spacers are not required below the bottommost nanowireto isolate the gate stack from materials in the source/drain region ofthe device.

FIGS. 2A-2E are cross-sectional views illustrating a method for forminga nanowire transistor configured with internal spacers by opening thesource/drain region of the device, according to an embodiment of theinvention. Each figure illustrates two alternate cross-sectional viewsof the partially-formed nanowire transistor 200: one on the left takenthrough the source/drain region of the device, and one on the righttaken parallel to nanowires 206. The location of the source/draincross-sectional left-hand view is illustrated by a dotted line in theright hand view.

Referring to FIG. 2A, a structure 200 having a nanowire stack 201disposed on a substrate 204 and two gate structures 222, each defining achannel region 208 within the nanowire stack 200 is provided.Source/drain regions 212 of the device 200 are disposed on oppositesides of each channel region 208.

In an embodiment, the nanowire stack 201 comprises nanowires 206 andsacrificial material 220. In an embodiment, the volume within nanowires206 and sacrificial material 220 is internal to nanowire stack 201,while volume outside nanowires 206 and sacrificial material 220 isexternal to nanowire stack 201. Nanowire stack 201 may be formed byknown methods, such as forming alternating layers of nanowire andsacrificial material over substrate 204, and then etching the layers toform a fin-type structure (nanowire stack 201), e.g. with a mask andplasma etch process.

In an embodiment, sacrificial material 220 may be any material that canbe selectively etched with respect to nanowires 206. Nanowires 206 andsacrificial material 220 may each be a material such as, but not limitedto, silicon, germanium, SiGe, GaAs, InSb, GaP, GaSb, InAlAs, InGaAs,GaSbP, GaAsSb, and InP. In a specific embodiment, nanowires 206 aresilicon and sacrificial material 220 is SiGe. In another specificembodiment, nanowires 206 are germanium, and sacrificial material 220 isSiGe. In an embodiment, sacrificial material 220 is formed to athickness sufficient to create a desired amount of strain in nanowires206.

The gate structures 222 may be functional or sacrificial. In the exampleembodiment illustrated in FIG. 2A, gate structures 222 are sacrificial,wrapping around nanowire stack 201. Gate structure 222 may be anysuitable material, such as polysilicon. In another embodiment, the gatestructures are functional and each comprises a gate dielectric layer anda gate electrode that wrap around the channel portions of nanowires 206.Functional gate materials are discussed above.

External gate sidewall spacers 210 are formed on the portion of the gatestructure 222 sidewalls that are external to the nanowire stack 201,according to an embodiment of the invention. External sidewall spacers210 may be formed using conventional methods of forming spacers known inthe art. External sidewall spacers 210 may be any suitable dielectricmaterial such as, but not limited to, silicon oxide, silicon nitride,silicon oxynitride and combinations thereof. In an embodiment, externalsidewall spacers 210 are from 20 to 100 Å thick.

In FIG. 2B, sacrificial material 220 within the source/drain regions 212of the device 200 is removed from between nanowires 206, according to anembodiment of the invention. In an embodiment, sacrificial material 220is removed up to the edge of the channel region 208, creating aplurality of dimple volumes 211. In an embodiment, dimples 211 aredefined by the surfaces of the two adjacent nanowires 206, the interfaceof the internal and external regions of the nanowire stack 201, and theedge of the channel region 208. In an embodiment, external sidewallspacer 210 wraps around nanowire stack 201 at the interface of theinternal and external regions of the nanowire stack, in contact withdimple volumes 211.

Sacrificial material 220 may be removed using any known etchant that isselective to nanowires 206. In an embodiment, sacrificial material 220is removed by a timed wet etch process, timed so as to undercut theexternal sidewall spacers 210. The selectivity of the etchant is greaterthan 50:1 for sacrificial material over nanowire material. In anembodiment, the selectivity is greater than 100:1. In an embodimentwhere nanowires 206 are silicon and sacrificial material 220 is silicongermanium, sacrificial material 220 is selectively removed using a wetetchant such as, but not limited to, aqueous carboxylic acid/nitricacid/HF solution and aqueous citric acid/nitric acid/HF solution. In anembodiment where nanowires 206 are germanium and sacrificial material220 is silicon germanium, sacrificial material 220 is selectivelyremoved using a wet etchant such as, but not limited to, ammoniumhydroxide (NH₄OH), tetramethylammonium hydroxide (TMAH), ethylenediaminepyrocatechol (EDP), or potassium hydroxide (KOH) solution. In anotherembodiment, sacrificial material 220 is removed by a combination of wetand dry etch processes.

In addition, the substrate 204 material below the bottommost nanowire206 in the nanowire stack 201 may optionally be removed to expose thefull perimeter of the bottommost nanowire 206, in which case the dimplevolume 211 is defined by the bottommost nanowire 206, the edge of thechannel region 208, and the substrate 204. Substrate 204 may be etchedby known processes selective to the substrate material over the nanowirematerial.

Next, in FIG. 2C, spacer material 226 is deposited over the exposedsurfaces within the source/drain region, such that it fills the dimplevolumes 211, according to an embodiment of the invention. In an exampleembodiment, spacer material 226 fills the spaces between adjacentnanowires 206. In an embodiment, spacer material 226 will be used toform internal spacers 202. Spacer material 226 may be any suitabledielectric material, such as silicon dioxide, silicon oxy-nitride, orsilicon nitride. In an embodiment, spacer material 226 is a low-kdielectric material, i.e., having a dielectric constant less than 3.6.Spacer material 226 may be deposited by any conformal method, such asatomic layer deposition (ALD) or chemical vapor deposition (CVD).

Optionally, the spacer material 226 deposited outside the dimple volume211 may then be transformed into transformed spacer material 228, asshown in the example embodiment illustrated in FIG. 2D. In anembodiment, transformed spacer material 228 has a different etchselectivity than spacer material 226. By altering the etch selectivityof transformed spacer material 228 as compared to spacer material 226,the etch process to remove excess spacer material from outside thedimple 211 is more easily controlled. Transformation may occur by plasmatreatment, implantation, oxidation, or a combination thereof. In anembodiment, external gate sidewall spacers 210 protect the dimplevolumes from the transformation process, so the transformation isself-aligned to omit the spacer material 226 within the dimple volumes211. The transformation process is sufficient to alter the etchselectivity of the spacer material 226 outside of the dimple volumes,but does not affect mobility or degrade performance of the nanowires 206within the source/drain regions 212.

Then, as shown in FIG. 2E, the spacer material is removed from theportion of the source/drain region 212 outside of the dimple volume; thedimple volumes retain spacer material 226, forming internal spacers 202.In an embodiment, where spacer material has been transformed intotransformed spacer material 228, transformed spacer material 228 may beremoved by a wet-etch process selective to transformed spacer material228 over spacer material 226. In another embodiment, transformed spacermaterial 228 may be removed by a timed isotropic wet etch process. Inyet another embodiment, a dry etch process is used to remove transformedspacer material 228. A combination of dry and wet etch processes mayalso be used to remove transformed spacer material 228.

In an embodiment where spacer material 226 outside of dimples 211 havenot been transformed, a timed isotropic wet etch process is used toremove a portion of spacer material 226 without removing spacer material226 from dimple 211. In another embodiment, a dry-etch process is usedto remove a portion of spacer material 226 without removing spacermaterial 226 from dimple 211. In another embodiment, a combination ofdry and wet etch processes is used to remove a portion of spacermaterial 226 without removing spacer material 226 from dimple 211.

Next, a functional gate electrode is formed, for example, by areplacement metal gate (RMG) process, according to an embodiment of theinvention. As shown in FIG. 2F, dielectric material 217 is blanketdeposited over the structure, filling the source/drain regions 212,according to an embodiment. Dielectric material 217 may be any suitabledielectric material, such as silicon dioxide, silicon oxy-nitride, orsilicon nitride.

The channel region is then opened, according to an embodiment. In anembodiment, the sacrificial gate structure 222 is first removed toexpose the channel portion of the nanowire stack within channel region208. Sacrificial gate electrode 222 may be removed using a conventionaletching method such a plasma dry etch or a wet etch. In an embodiment, awet etchant such as a TMAH solution may be used to selectively removethe sacrificial gate.

Next, the sacrificial material 220 is removed from the channel region208, to expose the full perimeter of the channel portion of eachnanowire 206, according to an embodiment. The removal of sacrificialmaterial 220 leaves a void between adjacent nanowires 206. In anembodiment, sacrificial material 226 is etched to expose the surface ofinternal spacers 202. Sacrificial material 220 may be etched by anysuitable process, as discussed above with respect to the etching ofsacrificial material 220 from the source/drain regions 212. In anembodiment, the portion of substrate 204 underlying the bottommostnanowire 206 is removed in order to expose the full perimeter of thebottommost nanowire 206, as discussed above with respect to etchingsubstrate 204 to expose the full perimeter of the source/drain portionof the bottommost nanowire 206.

Then, as shown in FIG. 2G, a functional gate structure may be formedwithin the channel region 208, wrapping around the channel portion ofeach nanowire 206. The gate structure may comprise a gate dielectriclayer 214 and gate electrode 216. In an embodiment, gate dielectriclayer 214 is conformally deposited on all exposed surfaces within thechannel region 208, including the exposed surface of the internal spacer202. In an embodiment gate electrode 216 is formed over the gatedielectric layer 214, wrapping around the portion of each nanowire 206within the channel region 208. Gate dielectric 214 and gate electrode216 may be formed by any suitable deposition method that is conformal,for example, ALD.

In another embodiment, the RMG process is performed after deposition ofspacer material 226, as shown in FIG. 2C. In an alternative embodiment,the RMG process is performed after the transformation of spacer material226, as shown in FIG. 2D.

Additional processing steps may be performed to form a functioningdevice, such as forming source/drain contacts. Source/drain contacts maybe formed in trenches etched in dielectric 217 to expose source/drainportions of nanowires 206. In an embodiment, source/drain contacts areformed from a metal species that wraps around the source/drain portionsof nanowires 206. In another embodiment, homogeneous source/drainportions are formed as discussed above with respect to FIG. 1D. In acompleted device, the internal spacers 202 isolate the functional gatestructure from the source/drain region. In an embodiment, internalspacers 202 reduce overlap capacitance between the portions of gateelectrode 216 internal to the nanowire stack and any adjacent conductiveor semiconductive material within the source/drain region 212.

FIGS. 3A-3F are cross-sectional views of a method for forming a nanowiretransistor 300 configured with internal spacers by opening the channelregion of the device, according to an embodiment of the invention. Eachfigure illustrates two alternate cross-sectional views of thepartially-formed nanowire transistor 300: one on the left taken throughthe channel region of the device, and one on the right taken parallel tothe nanowires. The location of the left-hand channel view is illustratedby a dotted line on the right-hand view parallel to the nanowires.

Referring to FIG. 3A, a structure is provided having a nanowire stack301 disposed above a substrate 304, a sacrificial gate structure 322defining a channel region 308, external gate sidewall spacers 310 on thesidewalls of sacrificial gate structure 322, and source/drain regions312 on opposite sides of the channel region 308. In an embodiment,source/drain regions 312 are covered by hardmask 330 and interlayerdielectric 332. Hardmask 330 may be any material suitable for protectingunderlying nanowires from etching and doping processes. Interlayerdielectric 332 may be any known low-k dielectric material, such assilicon dioxide, silicon oxy-nitride, or silicon nitride.

Next, as shown in FIG. 3B, nanowires 306 are exposed within the channelregion 308, according to an embodiment of the invention. In anembodiment, the sacrificial gate structure 322 is first removed toexpose the portion of the nanowire stack 301 within channel region 308.Sacrificial gate electrode 322 may be removed using a conventionaletching method such a plasma dry etch or a wet etch. In an embodiment, awet etchant such as a TMAH solution may be used to selectively removethe sacrificial gate.

Next, the sacrificial material 320 is removed from the channel region308, to expose the full perimeter of each nanowire 306, according to anembodiment. The removal of sacrificial material 320 leaves a voidbetween adjacent nanowires 306. In an embodiment, sacrificial material326 is etched beyond the channel region 308 to partially extend into thesource/drain region 312 in order to define dimples 311 in which theinternal spacers will be formed. In an embodiment, dimples 311 areetched in alignment with surface 307 of external sidewall spacer 310. Inan example embodiment, the dimple volume 311 is defined by the edge ofthe channel region 308, the interface of the internal and externalregions of the nanowire stack, and the surfaces of two adjacentnanowires 306. In an embodiment, external sidewall spacer 310 wrapsaround nanowire stack 301 at the interface of the internal and externalregions of the nanowire stack, in contact with dimple volumes 311.Sacrificial material 320 may be etched by any suitable process, asdiscussed above with respect to the etching of sacrificial material 220.In an embodiment, the portion of substrate 304 underlying the bottommostnanowire 306 is removed in order to expose the full perimeter of thebottommost nanowire 306, defining a dimple volume 311 below bottommostnanowire 306. Substrate 304 may be etched by any known process that isselective to substrate 304 material over nanowire 306 material.

Referring to FIG. 3C, spacer material 326 is then deposited within theopened channel region 308 so that it fills the dimples 311, according toan embodiment of the invention. In an embodiment, spacer material 326fills the channel region 308. Spacer material 326 may be deposited byany conformal method, such as ALD or CVD.

Optionally, as shown in FIG. 3D, the spacer material 326 within thechannel region 308, but not within the dimples 311, is transformed toform transformed spacer material 328. In an embodiment, transformedspacer material 328 has a different etch selectivity than spacermaterial 326. By altering the etch selectivity of transformed spacermaterial 328 as compared to spacer material 326, the etch process toremove excess spacer material from outside the dimple 311 is more easilycontrolled. Transformation may occur by plasma treatment, implantation,oxidation, or a combination thereof. In an example embodiment,transformed spacer material 328 is confined to the channel region 308,due to a self-aligned transformation process, wherein external gatesidewall spacers 310 protect the spacer material 326 within dimples 311from the transformation process. In an embodiment, the transformationprocess is sufficient to alter the etch selectivity of the spacermaterial 326 within the channel region, but does not affect mobility ordegrade performance of the nanowires 306.

Next, in FIG. 3E, the spacer material is removed from within the channelregion of the device. In an embodiment where spacer material 326 in thechannel region has been transformed to transformed spacer material 328,transformed spacer material 328 may be removed by a wet-etch processselective to transformed spacer material 328 over spacer material 326.In another embodiment, transformed spacer material 328 is removed by atimed isotropic wet etch process. In another embodiment, transformedspacer material 328 is removed by a dry-etch process. In anotherembodiment, transformed spacer material 328 is removed by a combinationof dry and wet etch processes.

In another embodiment where spacer material 326 has not beentransformed, spacer material 326 located within the channel region 308is removed by a timed isotropic wet etch process timed to not removespacer material 326 from dimples 311. In another embodiment, spacermaterial 326 located within the channel region 308 is removed by adry-etch process. In another embodiment, spacer material 326 is removedby a combination of dry and wet etch processes. In an embodiment, thedimples retain spacer material 326 to form internal spacers 302.

Then, as shown in FIG. 3F, a functional gate structure may be formedwithin the channel region 308, wrapping around the portion of eachnanowire 306. The gate structure may comprise a gate dielectric layer314 and gate electrode 316. In an embodiment, gate dielectric layer 314is conformally deposited on all exposed surfaces within the channelregion 308, including the exposed surface of the internal spacer 302. Inan embodiment gate electrode 316 is formed over the gate dielectriclayer 314, wrapping around the portion of each nanowire 306 within thechannel region 308. Gate dielectric 314 and gate electrode 316 may beformed by any suitable deposition method that is conformal, for example,ALD.

Additional processing steps may then be performed to form a functioningdevice, such as forming source/drain contacts. Source/drain contacts maybe formed in trenches etched to expose the full perimeter ofsource/drain portions of nanowires 306. In an embodiment, source/draincontacts are formed from a metal species that wraps around thesource/drain portions of nanowires 306. In another embodiment,homogeneous source/drain portions are formed as discussed above withrespect to FIG. 1D. In a completed device, the internal spacers 302isolate the functional gate structure from the source/drain region. Inan embodiment, internal spacers 302 reduce overlap capacitance betweenthe portions of gate electrode 316 internal to the nanowire stack andany adjacent conductive or semiconductive material within thesource/drain region 312.

FIG. 4 illustrates a computing device 400 in accordance with oneimplementation of the invention. The computing device 400 houses a board402. The board 402 may include a number of components, including but notlimited to a processor 404 and at least one communication chip 406. Theprocessor 404 is physically and electrically coupled to the board 402.In some implementations the at least one communication chip 406 is alsophysically and electrically coupled to the board 402. In furtherimplementations, the communication chip 406 is part of the processor404.

Depending on its applications, computing device 400 may include othercomponents that may or may not be physically and electrically coupled tothe board 402. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 406 enables wireless communications for thetransfer of data to and from the computing device 400. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 406 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 400 may include a plurality ofcommunication chips 406. For instance, a first communication chip 406may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 406 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 404 of the computing device 400 includes an integratedcircuit die packaged within the processor 404. In some implementationsof the invention, the integrated circuit die of the processor includesone or more gate all-around transistors having a plurality of internalgate sidewall spacers, in accordance with implementations of theinvention. The term “processor” may refer to any device or portion of adevice that processes electronic data from registers and/or memory totransform that electronic data into other electronic data that may bestored in registers and/or memory.

The communication chip 406 also includes an integrated circuit diepackaged within the communication chip 406. In accordance with anotherimplementation of the invention, the integrated circuit die of thecommunication chip includes one or more gate all-around transistorshaving a plurality of internal gate sidewall spacers, in accordance withimplementations of the invention.

In further implementations, another component housed within thecomputing device 400 may contain an integrated circuit die that includesone or more gate all-around transistors having a plurality of internalgate sidewall spacers, in accordance with implementations of theinvention.

In various implementations, the computing device 400 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 400 may be any other electronic device that processes data.

In an embodiment, a semiconductor device comprises a nanowire stackdisposed above a substrate, the nanowire stack having a plurality ofvertically-stacked nanowires; a gate structure wrapped around each ofthe plurality of nanowires, defining a channel region of the device, thegate structure having gate sidewalls; a pair of source/drain regions onopposite sides of the channel region; and an internal spacer on aportion of the gate sidewall between two adjacent nanowires, internal tothe nanowire stack. In an embodiment, the device further comprisesinternal spacers on each portion of the gate sidewalls underneath thebottom nanowire in the nanowire stack. In an embodiment, the internalspacers are formed from a low-k dielectric material selected from thegroup consisting of SiN, SiO2, SiON, and SiC. In an embodiment, thedevice further comprises a pair of external spacers on a portion of thegate sidewall external to the nanowire stack. In an embodiment, theexternal spacers have a first thickness normal to the surface of thegate sidewall, wherein the internal spacers have a second thicknessnormal to the gate sidewall, and wherein the second thickness is equalto the first thickness. In an embodiment, the source/drain regions ofthe device comprise a source/drain portion of the nanowires. In anotherembodiment, the source/drain regions of the device comprise ahomogeneous semiconductor material. In an embodiment, the gate structurecomprises a gate dielectric and a gate electrode. In an embodiment, thesubstrate is an SOI substrate. In an embodiment, the device furthercomprises a pair of source/drain contacts in contact with thesource/drain regions of the device. In an embodiment, the internalspacers isolate the source/drain contacts from the portion of the gatestructure sidewall internal to the nanowire stack.

In an embodiment, a method comprises providing a substrate having: ananowire stack disposed above a substrate, the nanowire stack having aplurality of vertically-stacked nanowires separated by sacrificialmaterial; a gate structure defining a channel region of the device,wherein the gate structure has a pair of gate sidewalls; and a pair ofsource/drain regions on opposite sides of the channel region; etching toremove the gate structure, exposing the surfaces of the nanowire stack;etching to remove the sacrificial material from between the nanowires toexpose the nanowire surfaces within the channel region; etching toremove a portion of sacrificial material between the nanowires in thesource/drain region, creating a dimple in the source/drain region; andfilling the dimples with spacer material to form a plurality of internalspacers. In an embodiment, the substrate is an SOI substrate having abase substrate, an insulation layer, and a single-crystal layer, whereina bottom-most nanowire in the nanowire stack is formed from thesingle-crystal layer, and wherein the method further comprises etchingto remove a portion of the insulation layer to form a dimple adjacent tothe channel region. In an embodiment, the dimples are etched inalignment with the external spacers. In an embodiment, wherein fillingthe dimples with spacer material comprises conformally depositing spacermaterial on the exposed nanowire surfaces. In an embodiment, furthercomprising removing a portion of the spacer material to expose thenanowire surfaces within the channel region. In an embodiment, themethod further comprises transforming the spacer material within thechannel region, wherein transforming the spacer material comprisesaltering the etch selectivity of the spacer material. In an embodiment,the spacer material comprises one or more of plasma treatment,implantation, or oxidation. In an embodiment, the method furthercomprises depositing a gate dielectric and gate electrode within thechannel region.

In another embodiment, a method comprises providing a substrate having:a nanowire stack disposed above a substrate, the nanowire stack having aplurality of vertically-stacked nanowires separated by sacrificialmaterial; a gate structure defining a channel region of the device,wherein the gate structure has a pair of gate sidewalls; and a pair ofsource/drain regions on opposite sides of the channel region; etching toremove the sacrificial material from between the nanowires in thesource/drain region, creating a plurality of dimples adjacent to thechannel region; and filling the dimples with spacer material to form aplurality of internal spacers. In an embodiment, the substrate is an SOIsubstrate having a base substrate, an insulation layer, and asingle-crystal layer, wherein a bottom-most nanowire in the nanowirestack is formed from the single-crystal layer, and wherein the methodfurther comprises etching to remove a portion of the insulation layer toform a dimple adjacent to the channel region. In an embodiment, thedimples are etched in alignment with the external spacers. In anembodiment, filling the dimples with spacer material comprisesdepositing spacer material in the source/drain region. In an embodiment,the method further comprises removing a portion of the spacer materialto expose the nanowire surfaces within the channel region. In anembodiment, the method further comprises transforming a portion of thespacer material within the source/drain region, but external to thedimple, wherein transforming the spacer material comprises altering theetch selectivity of the spacer material. In an embodiment, transformingthe spacer material comprises one or more of plasma treatment,implantation, or oxidation.

Although the invention has been described with reference to specificembodiments, it will be understood by those skilled in the art thatvarious changes may be made without departing from the spirit or scopeof the invention. Accordingly, the disclosure of embodiments of theinvention is intended to be illustrative of the scope of the inventionand is not intended to be limiting. It is intended that the scope of theinvention shall be limited only to the extent required by the appendedclaims. For example, to one of ordinary skill in the art, it will bereadily apparent that the internal spacers and the related structuresand methods discussed herein may be implemented in a variety ofembodiments, and that the foregoing discussion of certain of theseembodiments does not necessarily represent a complete description of allpossible embodiments.

Additionally, benefits, other advantages, and solutions to problems havebeen described with regard to specific embodiments. The benefits,advantages, solutions to problems, and any element or elements that maycause any benefit, advantage, or solution to occur or become morepronounced, however, are not to be construed as critical, required, oressential features or elements of any or all of the claims.

Moreover, embodiments and limitations disclosed herein are not dedicatedto the public under the doctrine of dedication if the embodiments and/orlimitations: (1) are not expressly claimed in the claims; and (2) are orare potentially equivalents of express elements and/or limitations inthe claims under the doctrine of equivalents.

What is claimed is:
 1. An integrated circuit structure, comprising: asemiconductor fin; a first gate stack portion above the semiconductorfin, the first gate stack portion comprising a gate dielectric materialon a top surface, on a bottom surface and on sidewalls of a gateelectrode material; a nanowire on the first gate stack portion; a pairof insulative spacers beneath the nanowire, wherein a first of the pairof insulative spacers is in contact with a first side of the first gatestack portion, and a second of the pair of insulative spacers is incontact with a second side of the first gate stack portion; and a secondgate stack portion on the nanowire, the second gate stack portioncomprising a gate dielectric material on a bottom surface and onsidewalls of a gate electrode material; a first source or drainstructure laterally adjacent to and in contact with the first of thepair of insulative spacers and a first end of the nanowire; and a secondsource or drain structure laterally adjacent to and in contact with thesecond of the pair of insulative spacers and a second end of thenanowire.
 2. The integrated circuit structure of claim 1, wherein thegate dielectric material of the second gate stack portion is further ona top surface of the gate electrode material of the second gate stackportion.
 3. The integrated circuit structure of claim 2, furthercomprising: a second nanowire on the second gate stack portion; a secondpair of insulative spacers beneath the second nanowire, wherein a firstof the second pair of insulative spacers is in contact with a first sideof the second gate stack portion, and a second of the second pair ofinsulative spacers is in contact with a second side of the second gatestack portion; and a third gate stack portion on the second nanowire,the third gate stack portion comprising a gate dielectric material on abottom surface and on sidewalls of a gate electrode material.
 4. Theintegrated circuit structure of claim 3, wherein the gate dielectricmaterial of the third gate stack portion is further on a top surface ofthe gate electrode material of the third gate stack portion.
 5. Theintegrated circuit structure of claim 3, wherein the first source ordrain structure is further laterally adjacent to and in contact with thefirst of the second pair of insulative spacers and a first end of thesecond nanowire, and wherein the second source or drain structure isfurther laterally adjacent to and in contact with the second of thesecond pair of insulative spacers and a second end of the secondnanowire.
 6. The integrated circuit structure of claim 5, wherein thefirst and second source or drain structures comprise a homogeneoussemiconductor material.
 7. The integrated circuit structure of claim 6,wherein the homogeneous semiconductor material is doped.
 8. Theintegrated circuit structure of claim 3, wherein the pair of insulativespacers and the second pair of insulative spacers are connected to forma pair of continuous spacers.
 9. The integrated circuit structure ofclaim 8, wherein the nanowire and the second nanowire extend through thepair of continuous spacers.
 10. The integrated circuit structure ofclaim 9, wherein the first and second source or drain structurescomprise a portion of the nanowire and the second nanowire that extendthrough the pair of continuous spacers.
 11. The integrated circuitstructure of claim 8, wherein the nanowire and the second nanowire donot extend through the pair of continuous spacers.
 12. The integratedcircuit structure of claim 1, wherein the first and second gate stackportions are connected to form a continuous gate stack.
 13. Theintegrated circuit structure of claim 1, wherein the nanowire is asilicon nanowire.
 14. A computing device, comprising: a board; and acomponent coupled to the board, the component including an integratedcircuit structure, comprising: a semiconductor fin; a first gate stackportion above the semiconductor fin, the first gate stack portioncomprising a gate dielectric material on a top surface, on a bottomsurface and on sidewalls of a gate electrode material; a nanowire on thefirst gate stack portion; a pair of insulative spacers beneath thenanowire, wherein a first of the pair of insulative spacers is incontact with a first side of the first gate stack portion, and a secondof the pair of insulative spacers is in contact with a second side ofthe first gate stack portion; and a second gate stack portion on thenanowire, the second gate stack portion comprising a gate dielectricmaterial on a bottom surface and on sidewalls of a gate electrodematerial; a first source or drain structure laterally adjacent to and incontact with the first of the pair of insulative spacers and a first endof the nanowire; and a second source or drain structure laterallyadjacent to and in contact with the second of the pair of insulativespacers and a second end of the nanowire.
 15. The computing device ofclaim 14, further comprising: a memory coupled to the board.
 16. Thecomputing device of claim 14, further comprising: a communication chipcoupled to the board.
 17. The computing device of claim 14, furthercomprising: a camera coupled to the board.
 18. The computing device ofclaim 14, wherein the component is a packaged integrated circuit die.19. The computing device of claim 14, wherein the component is selectedfrom the group consisting of a processor, a communications chip, and adigital signal processor.
 20. The computing device of claim 14, whereinthe computing device is selected from the group consisting of a mobilephone, a laptop, a desk top computer, a server, and a set-top box.